SUD19P06-60-GE3
メーカー:
ヴィシャイ シリコンニックス
記述:
MOSFET P-CH 60V 18.3A TO252
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 10A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1710 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
TO-252AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
18.3A (Tc)
電力損失（最高）:
2.3W (Ta),38.5W (Tc)
Technology:
MOSFET (Metal Oxide)
基本製品番号:
SUD19
導入
Pチャンネル 60 V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) 表面マウント TO-252AA
関連製品
2N7002E-T1-E3
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SIR872ADP-T1-RE3
MOSFET N-CH 150V 53.7A PPAK SO-8
SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
試験対象は,試験対象は,試験対象は,試験対象は,試験対象である.
MOSFET P-CH 20V 60A PPAK SO-8
IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3
SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
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SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252
SISA72DN-T1-GE3
MOSFET N-CH 40V 60A PPAK1212-8
| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
試験対象は,試験対象は,試験対象は,試験対象は,試験対象である. |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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MOQ: