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SISS71DN-T1-GE3

メーカー:
ヴィシャイ シリコンニックス
記述:
MOSFET P-CH 100V 23A PPAK1212-8S
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
59mOhm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 50 V
Mounting Type:
Surface Mount
Series:
ThunderFET®
Supplier Device Package:
PowerPAK® 1212-8S
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Power Dissipation (Max):
57W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS71
導入
Pチャンネル 100 V 23A (Tc) 57W (Tc) 表面マウント パワーPAK® 1212-8S
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