指定
カテゴリー:
離散半導体製品
トランジスタ
FET,MOSFET
シングルFET,MOSFET
FET Feature:
-
Vgs(th) (最大) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 250mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
21 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
240mA (Ta)
Power Dissipation (Max):
350mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7002
導入
Nチャネル 60 V 240mA (Ta) 350mW (Ta) 表面マウント SOT-23-3 (TO-236)
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イメージ | 部分# | 記述 | |
---|---|---|---|
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MOSFET N-CH 150V 53.7A PPAK SO-8
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試験対象は,試験対象は,試験対象は,試験対象は,試験対象である. |
MOSFET P-CH 20V 60A PPAK SO-8
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IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
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![]() |
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
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SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
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|
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SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
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SQSA12CENW-T1_GE3 |
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