指定
カテゴリー:
離散半導体製品
トランジスタ
FET,MOSFET
シングルFET,MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3240 pF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
52W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISA72
導入
Nチャンネル 40 V 60A (Tc) 52W (Tc) 表面マウント PowerPAK® 1212-8
Related Products

2N7002E-T1-E3
MOSFET N-CH 60V 240MA SOT23-3

SIR872ADP-T1-RE3
MOSFET N-CH 150V 53.7A PPAK SO-8

SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8

試験対象は,試験対象は,試験対象は,試験対象は,試験対象である.
MOSFET P-CH 20V 60A PPAK SO-8

IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3

SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8

SIJ478DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252

SQSA12CENW-T1_GE3
AUTOMOTIVE N-CHANNEL 100 V (D-S)
イメージ | 部分# | 記述 | |
---|---|---|---|
![]() |
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
![]() |
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
![]() |
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
![]() |
試験対象は,試験対象は,試験対象は,試験対象は,試験対象である. |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
![]() |
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
![]() |
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
![]() |
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
![]() |
SQSA12CENW-T1_GE3 |
AUTOMOTIVE N-CHANNEL 100 V (D-S)
|
RFQを送りなさい
標準的:
MOQ: