IXFX26N120P
メーカー:
イクシス
記述:
MOSFET N-CH 1200V 26A PLUS247-3
部門:
分離した半導体製品
指定
カテゴリー:
離散半導体製品
トランジスタ
FET,MOSFET
シングルFET,MOSFET
FET Feature:
-
Vgs(th) (最大) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Rds On (Max) @ Id, Vgs:
500mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
16000 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
960W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX26
導入
Nチャネル 1200 V 26A (Tc) 960W (Tc) 穴を通る PLUS247TM-3
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
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|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
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|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
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IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
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|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
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|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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