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IXFH12N120P

メーカー:
イクシス
記述:
MOSFET N-CH 1200V 12A TO247AD
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
103 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.35Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5400 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
543W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH12
導入
Nチャンネル 1200 V 12A (Tc) 543W (Tc) 穴を通ってTO-247AD (IXFH)
RFQを送りなさい
標準的:
MOQ: