IXFX180N10
メーカー:
イクシス
記述:
MOSFET N-CH 100V 180A PLUS247
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
390 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 90A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
パッケージ:
トューブ
Drain to Source Voltage (Vdss):
100 V
Vgs (最大):
±20V
Product Status:
Not For New Designs
入力容量 (Ciss) (最大) @ Vds:
10900 pF @ 25V
Mounting Type:
Through Hole
シリーズ:
HiPerFET™
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Power Dissipation (Max):
560W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX180
導入
Nチャンネル 100V 180A (Tc) 560W (Tc) 穴を通る PLUS247TM-3
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| イメージ | 部分# | 記述 | |
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IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
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IXFH20N80Q |
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IXFH15N80 |
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
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|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
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IXFN32N120P |
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IXFN32N100Q3 |
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IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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