IXFH12N100
メーカー:
イクシス
記述:
MOSFET N-CH 1000V 12A TO247AD
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
155 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Product Status:
Active
入力容量 (Ciss) (最大) @ Vds:
4000 pF @ 25V
Mounting Type:
Through Hole
シリーズ:
HiPerFET™
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
イクシス
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
電力損失（最高）:
300W （Tc）
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH12
導入
Nチャネル 1000 V 12A (Tc) 300W (Tc) 穴を通ってTO-247AD (IXFH)
Related Products
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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