IXFX66N85X
メーカー:
イクシス
記述:
MOSFET N-CH 850V 66A PLUS247-3
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
230 nC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8900 pF @ 25 V
Mounting Type:
Through Hole
シリーズ:
ハイパーフェットTM,ウルトラX
Supplier Device Package:
PLUS247™-3
Mfr:
イクシス
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
電力損失（最高）:
1250W (Tc)
Technology:
MOSFET (Metal Oxide)
基本製品番号:
IXFX66
導入
Nチャネル 850 V 66A (Tc) 1250W (Tc) 穴を通る PLUS247TM-3
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