IXTT170N10P
メーカー:
イクシス
記述:
MOSFET N-CH 100V 170A TO268
部門:
分離した半導体製品
指定
カテゴリー:
離散半導体製品
トランジスタ
FET,MOSFET
シングルFET,MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
動作温度:
-55°C~175°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
198 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Polar
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
170A (Tc)
Power Dissipation (Max):
715W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTT170
導入
Nチャンネル 100 V 170A (Tc) 715W (Tc) 表面マウント TO-268AA
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IXFH13N50 |
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