IXFB150N65X2

メーカー:
イクシス
記述:
MOSFET N-CH 650V 150A PLUS264
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
430 nC @ 10 V
Rds On (Max) @ Id, Vgs:
17mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
20400 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X2
Supplier Device Package:
PLUS264™
Mfr:
イクシス
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
電力損失(最高):
1560W (Tc)
Technology:
MOSFET (Metal Oxide)
基本製品番号:
IXFB150
導入
Nチャネル 650 V 150A (Tc) 1560W (Tc) 穴を通る PLUS264TM
RFQを送りなさい
標準的:
MOQ: