IXTQ200N10T
メーカー:
イクシス
記述:
MOSFET N-CH 100V 200A TO3P
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
152 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9400 pF @ 25 V
Mounting Type:
Through Hole
Series:
Trench
Supplier Device Package:
TO-3P
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Power Dissipation (Max):
550W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTQ200
導入
Nチャネル 100V 200A (Tc) 550W (Tc) 穴を通ってTO-3P
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
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|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
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IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
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IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
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|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
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|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
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IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
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IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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