IXFN180N25T
メーカー:
イクシス
記述:
MOSFET N-CH 250V 168A SOT227B
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
345 nC @ 10 V
Rds On (Max) @ Id, Vgs:
12.9mOhm @ 60A, 10V
FETタイプ:
Nチャンネル
Drive Voltage (Max Rds On, Min Rds On):
10V
パッケージ:
トューブ
Drain to Source Voltage (Vdss):
250 V
Vgs (最大):
±20V
Product Status:
Active
入力容量 (Ciss) (最大) @ Vds:
28000 pF @ 25V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Trench
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
168A (Tc)
Power Dissipation (Max):
900W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN180
導入
Nチャネル 250 V 168A (Tc) 900W (Tc) シャーシマウント SOT-227B
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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