IXTH10P50P
メーカー:
イクシス
記述:
MOSFET P-CH 500V 10A TO247
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FETの特徴:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
動作温度:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
ゲートチャージ (Qg) (最大) @ Vgs:
50 NC @ 10ボルト
Rds On (Max) @ Id, Vgs:
1Ohm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2840 pF @ 25 V
Mounting Type:
Through Hole
Series:
PolarP™
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH10
導入
Pチャネル 500 V 10A (Tc) 300W (Tc) 穴を通ってTO-247 (IXTH)
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
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|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
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IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
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|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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