IXFH320N10T2
メーカー:
イクシス
記述:
MOSFET N-CH 100V 320A TO247AD
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
430 nC @ 10 V
Rdsオン (最大) @ Id, Vgs:
3.5mOhm @ 100A、10V
FET Type:
N-Channel
駆動電圧 (最大Rdsオン,最小Rdsオン):
10V
Package:
Tube
流出電圧から源電圧 (Vdss):
100V
Vgs (Max):
±20V
製品の状況:
アクティブ
Input Capacitance (Ciss) (Max) @ Vds:
26000 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, TrenchT2™
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
320A (Tc)
Power Dissipation (Max):
1000W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH320
導入
Nチャネル 100 V 320A (Tc) 1000W (Tc) 穴を通って TO-247AD (IXFH)
関連製品
IXFK120N20
MOSFET N-CH 200V 120A TO-264AA
IXFK27N80
MOSFET N-CH 800V 27A TO264AA
IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD
IXFH12N90
MOSFET N-CH 900V 12A TO247AD
IXFH13N50
MOSFET N-CH 500V 13A TO247AD
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B
IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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