メッセージを送る

IXTA36N30P

メーカー:
イクシス
記述:
MOSFET N-CH 300V 36A TO263
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FETの特徴:
-
Vgs(th) (Max) @ Id:
5.5V @ 250µA
動作温度:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
110mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2250 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PolarHT™
Supplier Device Package:
TO-263AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTA36
導入
Nチャンネル 300V 36A (Tc) 300W (Tc) 表面マウント TO-263AA
RFQを送りなさい
標準的:
MOQ: