W9812G6KH-6I
メーカー:
ウィンボンド電子
記述:
IC DRAM 128MBIT PAR 54TSOP II
部門:
半導体
指定
カテゴリー:
集積回路 (IC)
記憶力
記憶力
Memory Size:
128Mbit
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
-
Supplier Device Package:
54-TSOP II
Memory Type:
Volatile
Mfr:
Winbond Electronics
Clock Frequency:
166 MHz
Voltage - Supply:
3V ~ 3.6V
Access Time:
5 ns
Package / Case:
54-TSOP (0.400", 10.16mm Width)
Memory Organization:
8M x 16
Operating Temperature:
-40°C ~ 85°C (TA)
Technology:
SDRAM
Base Product Number:
W9812G6
Memory Format:
DRAM
導入
SDRAMメモリIC 128Mbit パラレル 166 MHz 5 ns 54-TSOP II
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
W972GG6KB25I |
IC DRAM 2GBIT PARALLEL 84WBGA
|
|
|
|
W632GU6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W25N04KVZEIR |
IC FLASH 4GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB-12 |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W25N02KVZEIR |
IC FLASH 2GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB12I |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W632GU6NB11I |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W971GG8NB25I |
IC DRAM 1GBIT SSTL 18 60VFBGA
|
|
|
|
W632GG6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W632GU6NB-11 |
IC DRAM 2GBIT PAR 96VFBGA
|
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MOQ: