W29N01HZSINF
メーカー:
ウィンボンド電子
記述:
IC FLASH 1GBIT PARALLEL 48TSOP
部門:
半導体
指定
Category:
Integrated Circuits (ICs)
Memory
Memory
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
25ns
供給者のデバイスパッケージ:
48-TSOP
Memory Type:
Non-Volatile
Mfr:
ウィンボンド電子
Memory Size:
1Gbit
電圧 - 供給:
1.7V~1.95V
Access Time:
25 ns
パッケージ/ケース:
48-TFSOP (0.724", 18.40mm 幅)
Memory Organization:
128M x 8
Operating Temperature:
-40°C ~ 85°C (TA)
Technology:
FLASH - NAND (SLC)
Base Product Number:
W29N01
Memory Format:
FLASH
導入
FLASH - NAND (SLC) メモリIC 1Gbit パラレル 25 ns 48-TSOP
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
W972GG6KB25I |
IC DRAM 2GBIT PARALLEL 84WBGA
|
|
|
|
W632GU6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W25N04KVZEIR |
IC FLASH 4GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB-12 |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W25N02KVZEIR |
IC FLASH 2GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB12I |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W632GU6NB11I |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W971GG8NB25I |
IC DRAM 1GBIT SSTL 18 60VFBGA
|
|
|
|
W632GG6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W632GU6NB-11 |
IC DRAM 2GBIT PAR 96VFBGA
|
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