W971GG6NB25I
メーカー:
ウィンボンド電子
記述:
IC DRAM 1GBIT SSTL 18 84TFBGA
部門:
半導体
指定
Category:
Integrated Circuits (ICs)
Memory
Memory
Memory Size:
1Gbit
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
SSTL_18
Write Cycle Time - Word, Page:
15ns
供給者のデバイスパッケージ:
84-TFBGA (8x12.5)
Memory Type:
Volatile
Mfr:
ウィンボンド電子
Clock Frequency:
800 MHz
電圧 - 供給:
1.7V~1.9V
Access Time:
57.5 ns
パッケージ/ケース:
84-TFBGA
Memory Organization:
64M x 16
Operating Temperature:
-40°C ~ 95°C (TC)
Technology:
SDRAM - DDR2
Base Product Number:
W971GG6
Memory Format:
DRAM
導入
SDRAM - DDR2 メモリIC 1Gbit SSTL_18 800 MHz 57.5 ns 84-TFBGA (8x12.5)
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
|
|
W972GG6KB25I |
IC DRAM 2GBIT PARALLEL 84WBGA
|
|
|
|
W632GU6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W25N04KVZEIR |
IC FLASH 4GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB-12 |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W25N02KVZEIR |
IC FLASH 2GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB12I |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W632GU6NB11I |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W971GG8NB25I |
IC DRAM 1GBIT SSTL 18 60VFBGA
|
|
|
|
W632GG6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W632GU6NB-11 |
IC DRAM 2GBIT PAR 96VFBGA
|
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