FCP36N60N
メーカー:
単体
記述:
POWER MOSFET, N-CHANNEL, SUPREMO
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
112 nC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
4785 pF @ 100 V
Series:
SupreMOS™
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220-3
Rds On (Max) @ Id, Vgs:
90mOhm @ 18A, 10V
Mfr:
onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
312W (Tc)
パッケージ/ケース:
TO-220-3
Drain to Source Voltage (Vdss):
600 V
電流 - 連続流出 (Id) @ 25°C:
36A (Tc)
Technology:
MOSFET (Metal Oxide)
FETの特徴:
-
導入
Nチャネル 600 V 36A (Tc) 312W (Tc) トー-220-3の穴を通る
RFQを送りなさい
標準的:
MOQ: