RS1L120GNTB
メーカー:
ローム半導体
記述:
MOSFET N-CH 60V 12A/36A 8HSOP
部門:
分離した半導体製品
指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (最大) @ Id:
2.7V @ 200μA
Operating Temperature:
150°C (TJ)
パッケージ/ケース:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Rdsオン (最大) @ Id, Vgs:
12.7mOhm @ 12A, 10V
FET Type:
N-Channel
駆動電圧 (最大Rdsオン,最小Rdsオン):
4.5V,10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1330 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-HSOP
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 36A (Tc)
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RS1L
導入
Nチャンネル 60 V 12A (Ta), 36A (Tc) 3W (Ta) 表面マウント 8-HSOP
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| イメージ | 部分# | 記述 | |
|---|---|---|---|
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RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
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RRR040P03TL |
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RSR025P03TL |
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RUM003N02T2L |
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RD3P130SPTL1 |
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RD3H200SNTL1 |
MOSFET N-CH 45V 20A TO252
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RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
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RD3P050SNTL1 |
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RQ3E100ATTB |
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RV2C010UNT2L |
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