指定
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Rds On (Max) @ Id, Vgs:
11mOhm @ 62A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
製品の状況:
アクティブ
Input Capacitance (Ciss) (Max) @ Vds:
5270 pF @ 50 V
マウントタイプ:
穴を抜ける
Series:
HEXFET®
供給者のデバイスパッケージ:
TO-220AB
Mfr:
Infineon Technologies
電流 - 連続流出 (Id) @ 25°C:
104A (Tc)
Power Dissipation (Max):
380W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB4115
導入
Nチャネル 150 V 104A (Tc) 380W (Tc) 穴を通ってTO-220AB
RFQを送りなさい
標準的:
MOQ: